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Potassium persulphate based silica slurry for germanium chemical mechanical planarization
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Author : Apeksha Gupta a, R. Manivannan *b and S. N. Victoria b
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ABSTRACT
This study is based on germanium (Ge) chemical mechanical planarization (CMP) by potassium persulphate (KPS) as oxidizer in fumed silica slurry. All experiments were performed at room temperature to acquire Ge etch rate and removal rate. The effect of pH, tablespeed, downpressure and potassium persulphate concentration on germanium removal rate was studied.Higher etch rate and removal rate were obtained in alkaline pH attributable to higher oxidation of germanium surface followed by fast dissolution of germanium hydroxide complexes. The system followed non-Prestonian behavior. A probable reaction
mechanism for germanium removal in potassium persulphate based silica slurry is proposed
KEYWORD
Germanium, chemical mechanical planarization, potassium persulphate